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Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

机译:用于C-K频段的高隔离度RF MEMS并联电容开关的设计和仿真

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摘要

This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.
机译:本文提出了一种宽带RF MEMS电容式开关。通过使用曲折型膜,LC谐振频率在向下状态下从毫米波降低到X波段,通过在共面波导(CPW)的两端增加两条短的高阻抗线来增加频段。此外,这在向上状态位置中充当T匹配电路,并改善了匹配度。仿真结果表明,电容比从50降低至21.4,对于处于下降状态和上升状态的整个频带,S21和S11均小于-10dB。此外,提出了开关的完整而完整的电气模型,仿真结果与MEMS开关的物理结构特征非常吻合。该开关的Vpull-in和Vpull-out分别为8.1V和0.3V。

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